AP9916H MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9916H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 18 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 98 nS
Drain-Source Capacitance (Cd): 258 pF
Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm
Package: TO252
AP9916H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9916H Datasheet (PDF)
1.1. ap9916h-j.pdf 
Size:89K _update
AP9916H/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼Low on-resistance BVDSS 18V ▼ ▼ ▼ D ▼Capable of 2.5V gate drive RDS(ON) 25mΩ ▼ ▼ ▼ ▼Low drive current ID 35A ▼ ▼ ▼ G ▼Single Drive Requirement ▼ ▼ ▼ S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with th
5.1. ap9918gj.pdf Size:81K _a-power
AP9918GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ЎLow on-resistance BVDSS 20V Ў Ў Ў D ЎCapable of 2.5V gate drive RDS(ON) 14m? Ў Ў Ў ЎLow drive current ID 45A Ў Ў Ў G ЎSurface mount package Ў Ў Ў S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with
Datasheet: RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , RFL1P10 , RFP2N18L , IRF520 , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 , 2SK1202 , IPD06N03LA .
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