SIHFD123 Todos los transistores

 

SIHFD123 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFD123

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm

Encapsulados: HEXDIP

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SIHFD123 datasheet

 ..1. Size:1752K  vishay
irfd123 sihfd123.pdf pdf_icon

SIHFD123

IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par

 7.1. Size:1828K  vishay
irfd120 sihfd120.pdf pdf_icon

SIHFD123

IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par

 7.2. Size:1829K  vishay
irfd120pbf sihfd120.pdf pdf_icon

SIHFD123

IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par

 8.1. Size:147K  vishay
irfd110 sihfd110.pdf pdf_icon

SIHFD123

IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT End Stackable Qgs (nC) 2.3 Qgd (nC) 3.8 175 C Operating Temperature Configuration Single Fast Switching and Ease of Parall

Otros transistores... RFL1P10 , RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , IRFP250N , 2SK1202 , IPD06N03LA , IPU06N03LA , IPS06N03LA , IPF06N03LA , IXFT50N50P3 , IXFQ50N50P3 , IXFH50N50P3 .

History: D4NK50Z-TO252 | APQ02SN65AA

 

 

 

 

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