SIHFD123 MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHFD123
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.3 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 1.3 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 27 nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm
Package: HEXDIP
SIHFD123 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHFD123 Datasheet (PDF)
1.1. irfd123_sihfd123.pdf 
Size:1752K _update
IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.27 RoHS* • For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT • End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 • 175 °C Operating Temperature Configuration Single • Fast Switching D • Ease of Par
1.2. irfd123_sihfd123.pdf Size:1830K _vishay
IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* • For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT • End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 • 175 °C Operating Temperature Configuration Single • Fast Switching D • Ease of Paralleling • Complian
3.1. irfd120_sihfd120.pdf Size:1828K _vishay
IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* • For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT • End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 • 175 °C Operating Temperature Configuration Single • Fast Switching D • Ease of Paralleling • Complian
Datasheet: RFL1P10 , RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , IRF730 , 2SK1202 , IPD06N03LA , IPU06N03LA , IPS06N03LA , IPF06N03LA , IXFT50N50P3 , IXFQ50N50P3 , IXFH50N50P3 .
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