MDF11N65B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDF11N65B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 49.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MDF11N65B MOSFET
MDF11N65B PDF Specs
mdf11n65b.pdf
MDF11N65B N-Channel MOSFET 650V, 12A, 0.65 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed... See More ⇒
mdf11n65bth.pdf
MDF11N65B N-Channel MOSFET 650V, 12A, 0.65 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed... See More ⇒
mdf11n60th.pdf
MDF11N60 N-Channel MOSFET 600V, 11A, 0.55 General Description Features The MDF11N60 uses advanced MagnaChip s MOSFET V = 600V DS Technology, which provides low on-state resistance, high V = 660V @ T DS jmax switching performance and excellent quality. I = 11A @ V = 10V D GS R 0.55 @ V = 10V DS(ON) GS MDF11N60 is suitable device for SMPS, high Spee... See More ⇒
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History: IRFP150V
History: IRFP150V
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