MDF11N65B Todos los transistores

 

MDF11N65B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDF11N65B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 49.6 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 12 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 52 nS
   Conductancia de drenaje-sustrato (Cd): 180 pF
   Resistencia entre drenaje y fuente RDS(on): 0.55 Ohm
   Paquete / Cubierta: TO220F

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MDF11N65B Datasheet (PDF)

 ..1. Size:781K  magnachip
mdf11n65b.pdf

MDF11N65B MDF11N65B

MDF11N65B N-Channel MOSFET 650V, 12A, 0.65General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 0.1. Size:781K  magnachip
mdf11n65bth.pdf

MDF11N65B MDF11N65B

MDF11N65B N-Channel MOSFET 650V, 12A, 0.65General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 7.1. Size:956K  magnachip
mdf11n60th.pdf

MDF11N65B MDF11N65B

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55 General Description Features The MDF11N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V @ T DS jmaxswitching performance and excellent quality. I = 11A @ V = 10V D GS R 0.55 @ V = 10V DS(ON) GSMDF11N60 is suitable device for SMPS, high Spee

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