MDF11N65B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDF11N65B  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 49.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 52 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm

Encapsulados: TO220F

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MDF11N65B datasheet

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MDF11N65B

MDF11N65B N-Channel MOSFET 650V, 12A, 0.65 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 0.1. Size:781K  magnachip
 mdf11n65bth.pdf pdf_icon

MDF11N65B

MDF11N65B N-Channel MOSFET 650V, 12A, 0.65 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 7.1. Size:956K  magnachip
 mdf11n60th.pdf pdf_icon

MDF11N65B

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55 General Description Features The MDF11N60 uses advanced MagnaChip s MOSFET V = 600V DS Technology, which provides low on-state resistance, high V = 660V @ T DS jmax switching performance and excellent quality. I = 11A @ V = 10V D GS R 0.55 @ V = 10V DS(ON) GS MDF11N60 is suitable device for SMPS, high Spee

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