All MOSFET. MDF11N65B Datasheet

 

MDF11N65B Datasheet and Replacement


   Type Designator: MDF11N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO220F
 

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MDF11N65B Datasheet (PDF)

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MDF11N65B

MDF11N65B N-Channel MOSFET 650V, 12A, 0.65General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 0.1. Size:781K  magnachip
 mdf11n65bth.pdf pdf_icon

MDF11N65B

MDF11N65B N-Channel MOSFET 650V, 12A, 0.65General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 7.1. Size:956K  magnachip
 mdf11n60th.pdf pdf_icon

MDF11N65B

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55 General Description Features The MDF11N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V @ T DS jmaxswitching performance and excellent quality. I = 11A @ V = 10V D GS R 0.55 @ V = 10V DS(ON) GSMDF11N60 is suitable device for SMPS, high Spee

Datasheet: IPS06N03LA , IPF06N03LA , IXFT50N50P3 , IXFQ50N50P3 , IXFH50N50P3 , APM2510NU , IRF7832Z , 2SK2222 , 8205A , MMIS60R580P , 2SK3435 , 2SK3435-S , 2SK3435-Z , AM4410N , APM2014N , B3942 , CEB51A3 .

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