MDF11N65B Datasheet. Specs and Replacement

Type Designator: MDF11N65B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO220F

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MDF11N65B datasheet

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MDF11N65B

MDF11N65B N-Channel MOSFET 650V, 12A, 0.65 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed... See More ⇒

 0.1. Size:781K  magnachip
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MDF11N65B

MDF11N65B N-Channel MOSFET 650V, 12A, 0.65 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed... See More ⇒

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MDF11N65B

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55 General Description Features The MDF11N60 uses advanced MagnaChip s MOSFET V = 600V DS Technology, which provides low on-state resistance, high V = 660V @ T DS jmax switching performance and excellent quality. I = 11A @ V = 10V D GS R 0.55 @ V = 10V DS(ON) GS MDF11N60 is suitable device for SMPS, high Spee... See More ⇒

Detailed specifications: IPS06N03LA, IPF06N03LA, IXFT50N50P3, IXFQ50N50P3, IXFH50N50P3, APM2510NU, IRF7832Z, 2SK2222, 13N50, MMIS60R580P, 2SK3435, 2SK3435-S, 2SK3435-Z, AM4410N, APM2014N, B3942, CEB51A3

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