MMIS60R580P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMIS60R580P
Código: 60R580P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 70 W
Tensión drenaje-fuente |Vds|: 600 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 34 nS
Conductancia de drenaje-sustrato (Cd): 428 pF
Resistencia drenaje-fuente RDS(on): 0.53 Ohm
Paquete / Caja (carcasa): TO251VS
Búsqueda de reemplazo de MOSFET MMIS60R580P
MMIS60R580P Datasheet (PDF)
..1. mmis60r580p.pdf 
Size:1038K _magnachip
MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
0.1. mmis60r580pth.pdf Size:1191K _magnachip
MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
7.1. mmis60r750pth.pdf Size:1257K _magnachip
MMIS60R750P Datasheet MMIS60R750P 600V 0.75 N-channel MOSFET Description MMIS60R750P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
7.2. mmis60r900pth.pdf Size:1149K _magnachip
MMIS60R900P Datasheet MMIS60R900P 600V 0.9 N-channel MOSFET Description MMIS60R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF1405 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SVG104R5NS | SVG104R5NT | RX80N07 | GWM13S65YRX | GWM13S65YRY | GWM13S65YRD | GWM13S65YRE | DTM4415 | 2SK741 | YSF040N010T1A | YSK038N010T1A | YSP040N010T1A | ZM075N03D | KMK1265F | FNK6075K | CSD30N70