MMIS60R580P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMIS60R580P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 34 nS
Cossⓘ - Capacitancia de salida: 428 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm
Paquete / Cubierta: TO251VS
Búsqueda de reemplazo de MMIS60R580P MOSFET
Principales características: MMIS60R580P
mmis60r580p.pdf
MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmis60r580pth.pdf
MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmis60r750pth.pdf
MMIS60R750P Datasheet MMIS60R750P 600V 0.75 N-channel MOSFET Description MMIS60R750P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
mmis60r900pth.pdf
MMIS60R900P Datasheet MMIS60R900P 600V 0.9 N-channel MOSFET Description MMIS60R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
Otros transistores... IPF06N03LA , IXFT50N50P3 , IXFQ50N50P3 , IXFH50N50P3 , APM2510NU , IRF7832Z , 2SK2222 , MDF11N65B , 4435 , 2SK3435 , 2SK3435-S , 2SK3435-Z , AM4410N , APM2014N , B3942 , CEB51A3 , CEP51A3 .
History: OSG65R360DTF
History: OSG65R360DTF
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