MMIS60R580P PDF and Equivalents Search

 

MMIS60R580P PDF Specs and Replacement


   Type Designator: MMIS60R580P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 428 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: TO251VS
 

 MMIS60R580P substitution

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MMIS60R580P PDF Specs

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MMIS60R580P

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well ... See More ⇒

 0.1. Size:1191K  magnachip
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MMIS60R580P

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well ... See More ⇒

 7.1. Size:1257K  magnachip
 mmis60r750pth.pdf pdf_icon

MMIS60R580P

MMIS60R750P Datasheet MMIS60R750P 600V 0.75 N-channel MOSFET Description MMIS60R750P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a... See More ⇒

 7.2. Size:1149K  magnachip
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MMIS60R580P

MMIS60R900P Datasheet MMIS60R900P 600V 0.9 N-channel MOSFET Description MMIS60R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as... See More ⇒

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Detailed specifications: IPF06N03LA , IXFT50N50P3 , IXFQ50N50P3 , IXFH50N50P3 , APM2510NU , IRF7832Z , 2SK2222 , MDF11N65B , 4435 , 2SK3435 , 2SK3435-S , 2SK3435-Z , AM4410N , APM2014N , B3942 , CEB51A3 , CEP51A3 .

History: FDI2532 | QJD1210010

Keywords - MMIS60R580P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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