All MOSFET. MMIS60R580P Datasheet

 

MMIS60R580P Datasheet and Replacement


   Type Designator: MMIS60R580P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 428 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: TO251VS
 

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MMIS60R580P Datasheet (PDF)

 ..1. Size:1038K  magnachip
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MMIS60R580P

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 0.1. Size:1191K  magnachip
 mmis60r580pth.pdf pdf_icon

MMIS60R580P

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 7.1. Size:1257K  magnachip
 mmis60r750pth.pdf pdf_icon

MMIS60R580P

MMIS60R750P Datasheet MMIS60R750P 600V 0.75 N-channel MOSFET Description MMIS60R750P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 7.2. Size:1149K  magnachip
 mmis60r900pth.pdf pdf_icon

MMIS60R580P

MMIS60R900P Datasheet MMIS60R900P 600V 0.9 N-channel MOSFET Description MMIS60R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

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History: H5N3005LM

Keywords - MMIS60R580P MOSFET datasheet

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