MMIS60R580P Datasheet. Specs and Replacement

Type Designator: MMIS60R580P  📄📄 

Marking Code: 60R580P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 18 nC

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 428 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm

Package: TO251VS

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MMIS60R580P datasheet

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MMIS60R580P

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well ... See More ⇒

 0.1. Size:1191K  magnachip
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MMIS60R580P

MMIS60R580P Datasheet MMIS60R580P 600V 0.58 N-channel MOSFET Description MMIS60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well ... See More ⇒

 7.1. Size:1257K  magnachip
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MMIS60R580P

MMIS60R750P Datasheet MMIS60R750P 600V 0.75 N-channel MOSFET Description MMIS60R750P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a... See More ⇒

 7.2. Size:1149K  magnachip
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MMIS60R580P

MMIS60R900P Datasheet MMIS60R900P 600V 0.9 N-channel MOSFET Description MMIS60R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as... See More ⇒

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Detailed specifications: IPF06N03LA, IXFT50N50P3, IXFQ50N50P3, IXFH50N50P3, APM2510NU, IRF7832Z, 2SK2222, MDF11N65B, AO3401, 2SK3435, 2SK3435-S, 2SK3435-Z, AM4410N, APM2014N, B3942, CEB51A3, CEP51A3

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