ME60N03 Todos los transistores

 

ME60N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME60N03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO252
 

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ME60N03 Datasheet (PDF)

 ..1. Size:677K  matsuki electric
 me60n03.pdf pdf_icon

ME60N03

ME60N03 30V N-Channel Enhancement Mode MOSFETVDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@20A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute M

 ..2. Size:1102K  matsuki electric
 me60n03 me60n03-g.pdf pdf_icon

ME60N03

ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -gGENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power RDS(ON)8.5m@VGS=10Vfield effect transistors are produced using high cell density DMOS RDS(ON)13m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extre

 0.1. Size:649K  matsuki electric
 me60n03a.pdf pdf_icon

ME60N03

ME60N03A 25V N-Channel Enhancement Mode MOSFETVDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute

 0.2. Size:1465K  matsuki electric
 me60n03s me60n03s-g.pdf pdf_icon

ME60N03

ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFETVDS=30V APPLICATIONS Motherboard (V-Core) RDS(ON), Vgs@10V,Ids@30A 10m Portable Equipment RDS(ON), Vgs@4.5V,Ids@15A 18.5m DC/DC Converter Load Switch FEATURES LCD Display inverter Advanced trench process technology IPC High density cell design for ultra low on-resistance Spe

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CM13N50 | SM2A18NSV | FRE460D

 

 
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