ME60N03 PDF Specs and Replacement
Type Designator: ME60N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO252
ME60N03 substitution
ME60N03 PDF Specs
me60n03.pdf
ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@20A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute M... See More ⇒
me60n03 me60n03-g.pdf
ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -g GENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power RDS(ON) 8.5m @VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON) 13m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extre... See More ⇒
me60n03a.pdf
ME60N03A 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute ... See More ⇒
me60n03s me60n03s-g.pdf
ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V APPLICATIONS Motherboard (V-Core) RDS(ON), Vgs@10V,Ids@30A 10m Portable Equipment RDS(ON), Vgs@4.5V,Ids@15A 18.5m DC/DC Converter Load Switch FEATURES LCD Display inverter Advanced trench process technology IPC High density cell design for ultra low on-resistance Spe... See More ⇒
Detailed specifications: GPT13N50 , GPT13N50D , JCS4N65C , JCS4N65F , JCS4N65R , JCS4N65V , LSK389 , MDV1528 , IRFP250 , ME60N03A , NE5520279A , NTE458 , PHB55N03LTA , PHD55N03LTA , PHP55N03LTA , QM3006D , SI4340DY .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
