ME60N03A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ME60N03A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET ME60N03A

ME60N03A Datasheet (PDF)

..1. Size:649K matsuki electric
me60n03a.pdf

ME60N03A 25V N-Channel Enhancement Mode MOSFETVDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute

0.1. Size:1039K matsuki electric
me60n03as me60n03as-g.pdf

ME60N03AS/ME60N03AS-G25V N-Channel Enhancement Mode MOSFETVDS=25V APPLICATIONS Motherboard (V-Core) RDS(ON), Vgs@10V,Ids@30A 9m DC/DC Converter RDS(ON), Vgs@ 5V,Ids@15A 18m Load Switch LCD Display inverter FEATURES IPC Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC co

7.1. Size:677K matsuki electric
me60n03.pdf

ME60N03 30V N-Channel Enhancement Mode MOSFETVDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@20A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute M

7.2. Size:1102K matsuki electric
me60n03 me60n03-g.pdf

ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -gGENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power RDS(ON)8.5m@VGS=10Vfield effect transistors are produced using high cell density DMOS RDS(ON)13m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extre

7.3. Size:1465K matsuki electric
me60n03s me60n03s-g.pdf

ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFETVDS=30V APPLICATIONS Motherboard (V-Core) RDS(ON), Vgs@10V,Ids@30A 10m Portable Equipment RDS(ON), Vgs@4.5V,Ids@15A 18.5m DC/DC Converter Load Switch FEATURES LCD Display inverter Advanced trench process technology IPC High density cell design for ultra low on-resistance Spe

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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