ME60N03A - аналоги, даташиты, параметры транзистора

ME60N03A Datasheet (PDF)

..1. Size:649K matsuki electric
me60n03a.pdf pdf_icon

ME60N03A 25V N-Channel Enhancement Mode MOSFETVDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute

0.1. Size:1039K matsuki electric
me60n03as me60n03as-g.pdf pdf_icon

ME60N03AS/ME60N03AS-G25V N-Channel Enhancement Mode MOSFETVDS=25V APPLICATIONS Motherboard (V-Core) RDS(ON), Vgs@10V,Ids@30A 9m DC/DC Converter RDS(ON), Vgs@ 5V,Ids@15A 18m Load Switch LCD Display inverter FEATURES IPC Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC co

7.1. Size:677K matsuki electric
me60n03.pdf pdf_icon

ME60N03 30V N-Channel Enhancement Mode MOSFETVDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@20A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute M

7.2. Size:1102K matsuki electric
me60n03 me60n03-g.pdf pdf_icon

ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -gGENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power RDS(ON)8.5m@VGS=10Vfield effect transistors are produced using high cell density DMOS RDS(ON)13m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extre