FMR23N50E Todos los transistores

 

FMR23N50E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FMR23N50E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.245 Ohm

Encapsulados: TO3PF

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FMR23N50E datasheet

 ..1. Size:435K  fuji
fmr23n50e.pdf pdf_icon

FMR23N50E

FMR23N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) H

 0.1. Size:496K  fuji
fmr23n50es.pdf pdf_icon

FMR23N50E

FMR23N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V)

 8.1. Size:516K  fuji
fmr23n60e.pdf pdf_icon

FMR23N50E

FMR23N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) H

 8.2. Size:517K  fuji
fmr23n60es.pdf pdf_icon

FMR23N50E

FMR23N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V)

Otros transistores... SPP80N08S2L , STK630F , TSF8N60M , TSP8N60M , UTC50N06L , STK0460F , FMH23N50E , FMV23N50E , AO3400A , FQP630 , SVF2N60M , SVF2N60F , SVF2N60T , SVF2N60D , 2SK641 , 2SK642 , HBS170 .

History: WMO14N60C4 | WML13N65EM | WMM071N15HG2 | WMN13N80M3

 

 

 

 

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