FMR23N50E MOSFET. Datasheet pdf. Equivalent
Type Designator: FMR23N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 23 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.245 Ohm
Package: TO3PF
FMR23N50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMR23N50E Datasheet (PDF)
1.1. fmr23n50e.pdf 
Size:435K _update
FMR23N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V) H
1.2. fmr23n50es.pdf Size:496K _upd-mosfet
FMR23N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5V)
4.1. fmr23n60e.pdf Size:516K _upd-mosfet
FMR23N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V) H
4.2. fmr23n60es.pdf Size:517K _upd-mosfet
FMR23N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5V)
Datasheet: SPP80N08S2L , STK630F , TSF8N60M , TSP8N60M , UTC50N06L , STK0460F , FMH23N50E , FMV23N50E , TPC8107 , FQP630 , SVF2N60M , SVF2N60F , SVF2N60T , SVF2N60D , 2SK641 , 2SK642 , HBS170 .
