HFP4N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFP4N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 65 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de HFP4N60 MOSFET
HFP4N60 Datasheet (PDF)
hfp4n60.pdf

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP4N60 APPLICATIONSL TO-220 High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=25
hfp4n60f hfs4n60f.pdf

Oct 2016HFP4N60F / HFS4N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC RoHS CompliantHFP4N60F HFS4N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles
hfp4n65.pdf

Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan
hfp4n50.pdf

July 2005BVDSS = 500 VRDS(on) typ HFP4N50ID = 3.4 A500V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON
Otros transistores... HFH9N90 , HFP13N10 , HFP13N50 , HFP15N06 , HFP17N10 , HFP2N60 , HFP30N06 , HFP45N06 , 20N60 , HFP4N65 , HFP50N06 , HFP50N06V , HFP5N80 , HFP60N06 , HFP630 , HFP640 , HFP70N03V .
History: PJM90H09NTF | NP90N04VUG | 13N60AF | NCE3009S | SFB120N80A | GSM4850WS | FQAF16N25C
History: PJM90H09NTF | NP90N04VUG | 13N60AF | NCE3009S | SFB120N80A | GSM4850WS | FQAF16N25C



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