HFP4N60 Datasheet. Specs and Replacement
Type Designator: HFP4N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220
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HFP4N60 substitution
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HFP4N60 datasheet
hfp4n60f hfs4n60f.pdf
Oct 2016 HFP4N60F / HFS4N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 4A Excellent Switching Characteristics RDS(on), Typ 2.6 100% Avalanche Tested Qg, Typ 8.5 nC RoHS Compliant HFP4N60F HFS4N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles... See More ⇒
hfp4n65.pdf
Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan... See More ⇒
hfp4n50.pdf
July 2005 BVDSS = 500 V RDS(on) typ HFP4N50 ID = 3.4 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON... See More ⇒
Detailed specifications: HFH9N90, HFP13N10, HFP13N50, HFP15N06, HFP17N10, HFP2N60, HFP30N06, HFP45N06, 20N60, HFP4N65, HFP50N06, HFP50N06V, HFP5N80, HFP60N06, HFP630, HFP640, HFP70N03V
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