HFP7N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFP7N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 147 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de HFP7N60 MOSFET
HFP7N60 PDF Specs
hfp7n60.pdf
Shantou Huashan Electronic Devices Co., Ltd. HFP7N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan... See More ⇒
hfp7n80.pdf
Shantou Huashan Electronic Devices Co., Ltd. HFP7N80 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan... See More ⇒
Otros transistores... HFP630 , HFP640 , HFP70N03V , HFP70N06 , HFP730 , HFP740 , HFP75N08 , HFP75N80C , IRF3710 , HFP7N80 , HFP80N75 , HFP830 , HFP840 , HFR1N60 , HFU1N60 , HFU2N60 , HFU70N03V .
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