2SJ655 Todos los transistores

Ordering number EN7712A 2SJ655 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ655 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Un

Ordering number ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ652] Motor drive, DC / DC converter. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source Specifications 2.

Ordering number ENN7500 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ650] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source Specifications 2.55 2.55 SANYO TO-220ML Absolute Maximum Ratings

2SJ652 Ordering number EN7625A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ652 Applications Features ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V

Ordering number EN7501A 2SJ651 P-Channel Silicon MOSFET 2SJ651 DC / DC Converter Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS 20 V Drain Curr

Ordering number ENN7684 2SJ656 P-Channl Silicon MOSFET 2SJ656 General-Purpose Switching Device Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ656] 4.5 Motor drive, DC / DC converter. 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source Specifications 2.55 2.55 SANY

Ordering number EN7625A 2SJ652 P-Channel Power MOSFET http //onsemi.com 60V, 28A, 38m , TO-220F-3SG Features ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS 20