2SJ655 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ655
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 95 ns
Cossⓘ - Выходная емкость: 155 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.136 Ohm
Тип корпуса: TO220ML
2SJ655 Datasheet (PDF)
2sj655.pdf
Ordering number : EN7712A 2SJ655SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ655ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings Un
2sj652.pdf
Ordering number : ENN76252SJ652P-Channl Silicon MOSFET2SJ652General-Purpose Switching Device ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SJ652] Motor drive, DC / DC converter.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.
2sj650.pdf
Ordering number : ENN75002SJ650P-Channl Silicon MOSFET2SJ650DC / DC Converter ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SJ650]4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220MLAbsolute Maximum Ratings
2sj652-1e.pdf
2SJ652Ordering number : EN7625ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ652ApplicationsFeatures ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 V
2sj651.pdf
Ordering number : EN7501A 2SJ651P-Channel Silicon MOSFET2SJ651DC / DC Converter ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20 VDrain Curr
2sj656.pdf
Ordering number : ENN76842SJ656P-Channl Silicon MOSFET2SJ656General-Purpose Switching DeviceFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SJ656]4.5 Motor drive, DC / DC converter.10.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.55 2.55SANY
2sj652.pdf
Ordering number : EN7625A2SJ652P-Channel Power MOSFEThttp://onsemi.com 60V, 28A, 38m , TO-220F-3SGFeatures ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: HPMB84A | HPM3401 | HQB7N65C | 2N6659 | 40600 | IRF5305
History: HPMB84A | HPM3401 | HQB7N65C | 2N6659 | 40600 | IRF5305
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD