SD2932 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SD2932 datasheet

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SD2932 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features Gold metallization Excellent thermal stability Common source push-pull configuration P = 300 W min. with 15 dB gain @ 175 OUT MHz Description The SD2932 is a gold metallized N-channel MOS Figure 1 Pin connection field-effect RF power transistor used for 50 V DC large sign

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SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz M174 epoxy sealed DESCRIPTION The SD2931 is a gold metallized N-Channel MOS PIN CONNECTION field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up t

9.2. Size:346K st
sd2931-10.pdf pdf_icon

SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features Gold metallization Excellent thermal stability Common source configuration POUT = 150 W min. with 14 dB gain @ 175 MHz Thermally enhanced packaging for lower junction temperatures Description M174 Epoxy sealed The SD2931-10 is a gold metallized N-channel MOS field-effect RF power transisto

9.3. Size:514K st
sd2933.pdf pdf_icon

SD2933 HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features Gold metalization Excellent thermal stability Common source configuration POUT = 300 W min. with 20 dB gain @ 30 MHz Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed Description The SD2933 is a gold metalized N-channel MOS field-effect RF power trans