SD2932 - параметры транзистора MOSFET, его аналоги, datasheet

SD2932 Datasheet (PDF)

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SD2932 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features Gold metallization Excellent thermal stability Common source push-pull configuration P = 300 W min. with 15 dB gain @ 175 OUTMHz Description The SD2932 is a gold metallized N-channel MOS Figure 1: Pin connection field-effect RF power transistor used for 50 V DC large sign

9.1. Size:197K st
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SD2931RF POWER TRANSISTORSHF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz M174epoxy sealedDESCRIPTIONThe SD2931 is a gold metallized N-Channel MOSPIN CONNECTIONfield-effect RF power transistor. It is intended foruse in 50 V dc large signal applications up t

9.2. Size:346K st
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SD2931-10RF power transistorsHF/VHF/UHF N-channel MOSFETsFeatures Gold metallization Excellent thermal stability Common source configuration POUT = 150 W min. with 14 dB gain @ 175 MHz Thermally enhanced packaging for lower junction temperaturesDescriptionM174Epoxy sealedThe SD2931-10 is a gold metallized N-channel MOS field-effect RF power transisto

9.3. Size:514K st
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SD2933HF/VHF/UHF RF power N-channel MOSFETsDatasheet - production dataFeatures Gold metalization Excellent thermal stability Common source configuration POUT = 300 W min. with 20 dB gain @ 30 MHz Thermally enhanced packaging for lower junction temperaturesM177 Epoxy sealedDescriptionThe SD2933 is a gold metalized N-channel MOS field-effect RF power trans