AO4617 Datasheet. Equivalente

 ..1. Size:148K  aosemi
 ao4617.pdf

AO4617 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4617 uses advanced trench n-channel p-channel technology MOSFETs to provide excellen VDS (V) = 40V -40V RDS(ON) and low gate charge. The ID = 6A (VGS=10V) -5A (VGS = -10V) complementary MOSFETs may be used RDS(ON) RDS(ON) in H-bridge, Inverters and other

 9.1. Size:214K  aosemi
 ao4611.pdf

AO4611 60V Dual P + N-Channel MOSFET General Description Product Summary The AO4611 uses advanced trench technology N-Channel P-Channel MOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60V gate charge. The complementary MOSFETs may ID = 6.3A (VGS=10V) -4.9A be used to form a level shifted high side switch, RDS(ON) and for a host of other applications.

 9.2. Size:217K  aosemi
 ao4614.pdf

AO4614 40V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4614 uses advanced trench technology VDS (V) = 40V -40V MOSFETs to provide excellent RDS(ON) and low gate ID = 6A (VGS=10V) -5A (VGS = -10V) charge. The complementary MOSFETs may be used in RDS(ON) RDS(ON) H-bridge, Inverters and other applications.

 9.3. Size:476K  aosemi
 ao4612.pdf

AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel The AO4612 uses advanced trench technology VDS (V) = 60V -60V MOSFETs to provide excellent RDS(ON) and low gate ID = 4.5A (VGS=10V) -3.2A (VGS = -10V) charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)

 9.4. Size:382K  aosemi
 ao4616.pdf

AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration ID= 8A (VGS=10V) -7A (VGS=-10V) is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

 9.5. Size:233K  aosemi
 ao4614b.pdf

AO4614B 40V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4614B uses advanced trench technology VDS (V) = 40V, -40V MOSFETs to provide excellent RDS(ON) and low gate ID = 6A (VGS=10V) -5A (VGS=-10V) charge. The complementary MOSFETs may be used RDS(ON) in H-bridge, Inverters and other applications.

 9.6. Size:214K  aosemi
 ao4613.pdf

AO4613 30V Dual P + N-Channel MOSFET General Description Product Summary The AO4613 uses advanced trench technology N-Channel P-Channel MOSFETs to provide excellent RDS(ON) and low VDS (V) = 30V -30V gate charge. The complementary MOSFETs may ID = 7.2A (VGS=10V) -6.1A (VGS=10V) be used to form a level shifted high side switch, RDS(ON) RDS(ON) and for a host of other applications.

 9.7. Size:489K  aosemi
 ao4618.pdf

AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 40V -40V complementary N and P channel MOSFET configuration ID= 8A (VGS=10V) -7A (VGS=-10V) is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

 9.8. Size:1663K  kexin
 ao4611.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4611 (KO4611) SOP-8 Unit mm Features N-Channel VDS (V) = 60V ID = 6.3 A (VGS = 10V) 1.50 0.15 RDS(ON) 25m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 S2 5 D1 P-Channel 6 D1 2 G2 7 D2 3 S1 VDS (V) = -60V 8 D2 4 G1 ID = -4.9 A (VGS = -10V) RDS(ON) 42m (VGS = -10V) RDS(ON) 52m (VGS = -4.5

 9.9. Size:2504K  kexin
 ao4612.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4612 (KO4612) SOP-8 Unit mm Features N-Channel VDS (V) = 60V ID = 4.5 A (VGS = 10V) 1.50 0.15 RDS(ON) 56m (VGS = 10V) RDS(ON) 77m (VGS = 4.5V) 1 S2 5 D1 P-Channel 6 D1 2 G2 7 D2 3 S1 VDS (V) = -60V 8 D2 4 G1 ID = -3.2 A (VGS = -10V) RDS(ON) 105m (VGS = -10V) RDS(ON) 135m (VGS = -4

 9.10. Size:1814K  kexin
 ao4616.pdf

 9.11. Size:1597K  kexin
 ao4614b.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4614B (KO4614B) SOP-8 Unit mm Features N-Channel VDS (V) = 40V ID = 6 A (VGS = 10V) 1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 38m (VGS = 4.5V) 1 S2 5 D1 P-Channel 6 D1 2 G2 7 D2 3 S1 VDS (V) = -40V 8 D2 4 G1 ID = -5 A (VGS = -10V) RDS(ON) 45m (VGS = -10V) RDS(ON) 63m (VGS = -4.5V)

 9.12. Size:2230K  kexin
 ao4614a.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4614A (KO4614A) SOP-8 Unit mm Features N-Channel VDS (V) = 40V ID = 6 A (VGS = 10V) 1.50 0.15 RDS(ON) 31m (VGS = 10V) RDS(ON) 45m (VGS = 4.5V) 1 S2 5 D1 6 D1 P-Channel 2 G2 7 D2 3 S1 VDS (V) = -40V 8 D2 4 G1 ID = -5 A (VGS = -10V) RDS(ON) 45m (VGS = -10V) RDS(ON) 63m (VGS = -4.5V)

 9.13. Size:2169K  kexin
 ao4613.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4613 (KO4613) SOP-8 Unit mm Features N-Channel VDS (V) = 30V ID = 7.2 A (VGS = 10V) 1.50 0.15 RDS(ON) 24m (VGS = 10V) RDS(ON) 40m (VGS = 4.5V) 1 S2 5 D1 P-Channel 6 D1 2 G2 7 D2 3 S1 VDS (V) = -30V 8 D2 4 G1 ID = -6.1 A (VGS = -10V) RDS(ON) 37m (VGS = -10V) RDS(ON) 60m (VGS = -4.

 9.14. Size:2570K  kexin
 ao4618.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4618 (KO4618) SOP-8 Unit mm Features N-Channel VDS (V) = 40V ID = 8 A (VGS = 10V) 1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 27m (VGS = 4.5V) 1 S2 5 D1 P-Channel 6 D1 2 G2 7 D2 3 S1 VDS (V) = -40V 8 D2 4 G1 ID = -7 A (VGS = -10V) RDS(ON) 23m (VGS = -10V) RDS(ON) 30m (VGS = -4.5V)

 9.15. Size:891K  cn vbsemi
 ao4614-30v.pdf

AO4614&-30V www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at