AO4617Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4617 uses advanced trench n-channel p-channeltechnology MOSFETs to provide excellen VDS (V) = 40V -40VRDS(ON) and low gate charge. The ID = 6A (VGS=10V) -5A (VGS = -10V)complementary MOSFETs may be used RDS(ON) RDS(ON) in H-bridge, Inverters and other

AO461160V Dual P + N-Channel MOSFETGeneral Description Product SummaryThe AO4611 uses advanced trench technology N-Channel P-ChannelMOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60Vgate charge. The complementary MOSFETs may ID = 6.3A (VGS=10V) -4.9Abe used to form a level shifted high side switch,RDS(ON)and for a host of other applications.

AO461440V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4614 uses advanced trench technology VDS (V) = 40V -40VMOSFETs to provide excellent RDS(ON) and low gateID = 6A (VGS=10V) -5A (VGS = -10V)charge. The complementary MOSFETs may be used inRDS(ON) RDS(ON)H-bridge, Inverters and other applications.

AO461260V Complementary Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesn-channel p-channelThe AO4612 uses advanced trench technology VDS (V) = 60V -60VMOSFETs to provide excellent RDS(ON) and low gate ID = 4.5A (VGS=10V) -3.2A (VGS = -10V)charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)

AO461630V Complementary MOSFETGeneral Description Product SummaryThe AO4616 uses advanced trench technology to provide N-Channel P-Channelexcellent RDS(ON) and low gate charge. ThisVDS= 30V -30Vcomplementary N and P channel MOSFET configuration ID= 8A (VGS=10V) -7A (VGS=-10V)is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

AO4614B40V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4614B uses advanced trench technology VDS (V) = 40V, -40VMOSFETs to provide excellent RDS(ON) and low gateID = 6A (VGS=10V) -5A (VGS=-10V)charge. The complementary MOSFETs may be usedRDS(ON)in H-bridge, Inverters and other applications.

AO461330V Dual P + N-Channel MOSFETGeneral Description Product SummaryThe AO4613 uses advanced trench technology N-Channel P-ChannelMOSFETs to provide excellent RDS(ON) and low VDS (V) = 30V -30Vgate charge. The complementary MOSFETs may ID = 7.2A (VGS=10V) -6.1A (VGS=10V)be used to form a level shifted high side switch,RDS(ON) RDS(ON)and for a host of other applications.

AO461840V Complementary MOSFETGeneral Description Product SummaryThe AO4618 uses advanced trench technology to provide N-Channel P-Channelexcellent RDS(ON) and low gate charge. ThisVDS= 40V -40Vcomplementary N and P channel MOSFET configuration ID= 8A (VGS=10V) -7A (VGS=-10V)is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

SMD Type MOSFETComplementary Trench MOSFET AO4611 (KO4611)SOP-8 Unit:mm Features N-Channel : VDS (V) = 60VID = 6.3 A (VGS = 10V)1.50 0.15RDS(ON) 25m (VGS = 10V)RDS(ON) 30m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -60V8 D24 G1ID = -4.9 A (VGS = -10V)RDS(ON) 42m (VGS = -10V)RDS(ON) 52m (VGS = -4.5

SMD Type MOSFETComplementary Trench MOSFET AO4612 (KO4612)SOP-8 Unit:mm Features N-Channel : VDS (V) = 60VID = 4.5 A (VGS = 10V)1.50 0.15RDS(ON) 56m (VGS = 10V)RDS(ON) 77m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -60V8 D24 G1ID = -3.2 A (VGS = -10V)RDS(ON) 105m (VGS = -10V)RDS(ON) 135m (VGS = -4

SMD Type MOSFETComplementary Trench MOSFET AO4616 (KO4616)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30VID = 8 A (VGS = 10V)1.50 0.15RDS(ON) 20m (VGS = 10V)RDS(ON) 28m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -30V8 D24 G1ID = -7 A (VGS = -10V)RDS(ON) 22m (VGS = -10V)RDS(ON) 40m (VGS = -4.5V)

SMD Type MOSFETComplementary Trench MOSFET AO4614B (KO4614B)SOP-8 Unit:mm Features N-Channel : VDS (V) = 40VID = 6 A (VGS = 10V)1.50 0.15RDS(ON) 30m (VGS = 10V)RDS(ON) 38m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -5 A (VGS = -10V)RDS(ON) 45m (VGS = -10V)RDS(ON) 63m (VGS = -4.5V)

SMD Type MOSFETComplementary Trench MOSFET AO4614A (KO4614A)SOP-8 Unit:mm Features N-Channel : VDS (V) = 40VID = 6 A (VGS = 10V)1.50 0.15RDS(ON) 31m (VGS = 10V)RDS(ON) 45m (VGS = 4.5V)1 S2 5 D1 6 D1 P-Channel : 2 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -5 A (VGS = -10V)RDS(ON) 45m (VGS = -10V)RDS(ON) 63m (VGS = -4.5V)

SMD Type MOSFETComplementary Trench MOSFET AO4613 (KO4613)SOP-8Unit:mm Features N-Channel : VDS (V) = 30VID = 7.2 A (VGS = 10V)1.50 0.15RDS(ON) 24m (VGS = 10V)RDS(ON) 40m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -30V8 D24 G1ID = -6.1 A (VGS = -10V)RDS(ON) 37m (VGS = -10V)RDS(ON) 60m (VGS = -4.

SMD Type MOSFETComplementary Trench MOSFET AO4618 (KO4618)SOP-8Unit:mm Features N-Channel : VDS (V) = 40VID = 8 A (VGS = 10V)1.50 0.15RDS(ON) 19m (VGS = 10V)RDS(ON) 27m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -7 A (VGS = -10V)RDS(ON) 23m (VGS = -10V)RDS(ON) 30m (VGS = -4.5V)

AO4614&-30Vwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at