AO4926 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4926
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5(7.3) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5.5(3.5) nS
   Cossⓘ - Capacitancia de salida: 317(88) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135(0.024) Ohm
   Paquete / Cubierta: SOIC8

Búsqueda de reemplazo de MOSFET AO4926

AO4926 Datasheet (PDF)

..1. Size:239K aosemi
ao4926.pdf

AO4926Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4926 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9.5A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

9.1. Size:237K aosemi
ao4928.pdf

AO4928Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4928 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30VMOSFETs make a compact and efficient switch and ID = 9A ID=7.3A (VGS = 10V)synchronous rectifier combination for use in DC-DCRDS(ON)

9.2. Size:239K aosemi
ao4922.pdf

AO4922Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4922 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

9.3. Size:256K aosemi
ao4924.pdf

AO4924Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4924 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

9.4. Size:2519K kexin
ao4922.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4922 (KO4922)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V1.50 0.15 ID = 9 A (VGS = 10V) RDS(ON) 15.8m (VGS = 10V)1 S1 5 D2 6 D22 G1 RDS(ON) 18.5m (VGS = 4.5V)7 D13 S2SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode 8 D1 4 G2N-Channel 2 VDS (V) = 30V ID = 7.3 A (VGS =

9.5. Size:2020K kexin
ao4924.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4924 (KO4924)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V ID = 9 A (VGS = 10V)1.50 0.15 RDS(ON) 15.8m (VGS = 10V) RDS(ON) 19.5m (VGS = 4.5V)1 S1 5 D2 SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode6 D22 G1N-Channel 2 7 D13 S28 D14 G2 VDS (V) = 30V ID = 7.3 A (VGS =

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VSO025C03MC | AOT262L

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