AO4926 Todos los transistores

 

AO4926 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AO4926
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5(7.3) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.5(3.5) nS
   Cossⓘ - Capacitancia de salida: 317(88) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135(0.024) Ohm
   Paquete / Cubierta: SOIC8
 

 Búsqueda de reemplazo de AO4926 MOSFET

   - Selección ⓘ de transistores por parámetros

 

AO4926 Datasheet (PDF)

 ..1. Size:239K  aosemi
 ao4926.pdf pdf_icon

AO4926

AO4926Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4926 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9.5A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

 9.1. Size:237K  aosemi
 ao4928.pdf pdf_icon

AO4926

AO4928Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4928 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30VMOSFETs make a compact and efficient switch and ID = 9A ID=7.3A (VGS = 10V)synchronous rectifier combination for use in DC-DCRDS(ON)

 9.2. Size:239K  aosemi
 ao4922.pdf pdf_icon

AO4926

AO4922Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4922 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

 9.3. Size:256K  aosemi
 ao4924.pdf pdf_icon

AO4926

AO4924Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4924 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

MOSTRAR MÁS

Otros transistores... AO4617 , AO4708 , AO4722 , AO4726 , AO4728 , AO4772 , AO4916 , AO4916L , 18N50 , AO4928 , AO6806 , AO8803 , AO8806 , AO8816 , AO8842 , AOD400 , AOD402 .

History: KNP2404A | NTMD4820N | SSM5H16TU | IRFS232 | WMJ80R160S | AP2310S

 

 
Back to Top

 


 
.