AO4926 Todos los transistores

 

AO4926 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO4926

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 9.5(7.3) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5(3.5) nS

Cossⓘ - Capacitancia de salida: 317(88) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135(0.024) Ohm

Encapsulados: SOIC8

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AO4926 datasheet

 ..1. Size:239K  aosemi
 ao4926.pdf pdf_icon

AO4926

AO4926 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4926 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30V two MOSFETs make a compact and efficient switch ID = 9.5A ID=7.3A (VGS = 10V) and synchronous rectifier combination for use in DC- RDS(ON)

 9.1. Size:237K  aosemi
 ao4928.pdf pdf_icon

AO4926

AO4928 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4928 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30V MOSFETs make a compact and efficient switch and ID = 9A ID=7.3A (VGS = 10V) synchronous rectifier combination for use in DC-DC RDS(ON)

 9.2. Size:239K  aosemi
 ao4922.pdf pdf_icon

AO4926

AO4922 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4922 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30V two MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V) and synchronous rectifier combination for use in DC- RDS(ON)

 9.3. Size:256K  aosemi
 ao4924.pdf pdf_icon

AO4926

AO4924 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4924 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30V two MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V) and synchronous rectifier combination for use in DC- RDS(ON)

MOSTRAR MÁS

Otros transistores... AO4617 , AO4708 , AO4722 , AO4726 , AO4728 , AO4772 , AO4916 , AO4916L , BS170 , AO4928 , AO6806 , AO8803 , AO8806 , AO8816 , AO8842 , AOD400 , AOD402 .

History: 2SK1764 | WML26N65C4 | 2SK4065-DL-1E

 

 

 

 

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