All MOSFET. AO4926 Datasheet

 

AO4926 Datasheet and Replacement


   Type Designator: AO4926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9.5(7.3) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5(3.5) nS
   Cossⓘ - Output Capacitance: 317(88) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135(0.024) Ohm
   Package: SOIC8
 

 AO4926 substitution

   - MOSFET ⓘ Cross-Reference Search

 

AO4926 Datasheet (PDF)

 ..1. Size:239K  aosemi
 ao4926.pdf pdf_icon

AO4926

AO4926Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4926 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9.5A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

 9.1. Size:237K  aosemi
 ao4928.pdf pdf_icon

AO4926

AO4928Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4928 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30VMOSFETs make a compact and efficient switch and ID = 9A ID=7.3A (VGS = 10V)synchronous rectifier combination for use in DC-DCRDS(ON)

 9.2. Size:239K  aosemi
 ao4922.pdf pdf_icon

AO4926

AO4922Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4922 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

 9.3. Size:256K  aosemi
 ao4924.pdf pdf_icon

AO4926

AO4924Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4924 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

SHOW MORE

Datasheet: AO4617 , AO4708 , AO4722 , AO4726 , AO4728 , AO4772 , AO4916 , AO4916L , 18N50 , AO4928 , AO6806 , AO8803 , AO8806 , AO8816 , AO8842 , AOD400 , AOD402 .

History: SSF4015 | K1109 | PDS6904 | KI9926A | HYG065N07NS1B | PSMN3R0-30MLC | HYG065N15NS1B6

Keywords - AO4926 MOSFET datasheet

 AO4926 cross reference
 AO4926 equivalent finder
 AO4926 lookup
 AO4926 substitution
 AO4926 replacement

 

 
Back to Top

 


 
.