AO4926
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4926
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4(1.5)
V
|Id|ⓘ - Maximum Drain Current: 9.5(7.3)
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 33(10)
nC
trⓘ - Rise Time: 5.5(3.5)
nS
Cossⓘ -
Output Capacitance: 317(88)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135(0.024)
Ohm
Package:
SOIC8
AO4926
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4926
Datasheet (PDF)
..1. Size:239K aosemi
ao4926.pdf 
AO4926Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4926 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9.5A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)
9.1. Size:237K aosemi
ao4928.pdf
AO4928Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4928 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30VMOSFETs make a compact and efficient switch and ID = 9A ID=7.3A (VGS = 10V)synchronous rectifier combination for use in DC-DCRDS(ON)
9.2. Size:239K aosemi
ao4922.pdf
AO4922Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4922 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)
9.3. Size:256K aosemi
ao4924.pdf
AO4924Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4924 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)
9.4. Size:2519K kexin
ao4922.pdf
SMD Type MOSFETDual N-Channel MOSFETAO4922 (KO4922)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V1.50 0.15 ID = 9 A (VGS = 10V) RDS(ON) 15.8m (VGS = 10V)1 S1 5 D2 6 D22 G1 RDS(ON) 18.5m (VGS = 4.5V)7 D13 S2SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode 8 D1 4 G2N-Channel 2 VDS (V) = 30V ID = 7.3 A (VGS =
9.5. Size:2020K kexin
ao4924.pdf
SMD Type MOSFETDual N-Channel MOSFETAO4924 (KO4924)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V ID = 9 A (VGS = 10V)1.50 0.15 RDS(ON) 15.8m (VGS = 10V) RDS(ON) 19.5m (VGS = 4.5V)1 S1 5 D2 SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode6 D22 G1N-Channel 2 7 D13 S28 D14 G2 VDS (V) = 30V ID = 7.3 A (VGS =
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