AO8803 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO8803
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 44 nC
   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 910 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TSSOP8

Búsqueda de reemplazo de MOSFET AO8803

AO8803 Datasheet (PDF)

..1. Size:114K aosemi
ao8803.pdf

AO8803Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8803/L uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and ID = -7 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)

9.1. Size:349K aosemi
ao8801a.pdf

AO8801A20V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO8801A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -4.5Awith gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)

9.2. Size:108K aosemi
ao8806.pdf

AO8806Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8806 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 7 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)

9.3. Size:302K aosemi
ao8801.pdf

AO8801Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8801 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and operation ID = -4.7 A (VGS = -4.5V)with gate voltages as low as 1.8V. This device is RDS(ON)

9.4. Size:139K aosemi
ao8804.pdf

AO8804Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8804 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 8A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON)

9.5. Size:152K aosemi
ao8807.pdf

AO8807Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8807 uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and ID = -6.5 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)

9.6. Size:365K aosemi
ao8808a.pdf

AO8808ADual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8808A uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 7.9A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)

9.7. Size:1349K cn vbsemi
ao8801.pdf

AO8801www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2P-Channel

9.8. Size:1565K cn vbsemi
ao8808a.pdf

AO8808Awww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.013 at VGS = 4.5 V Available7.620RoHS*0.020 at VGS = 2.5 V 6.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATINGS TA = 25

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