AO8803
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO8803
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 44
nC
trⓘ - Rise Time: 43
nS
Cossⓘ -
Output Capacitance: 910
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018
Ohm
Package:
TSSOP8
AO8803
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO8803
Datasheet (PDF)
..1. Size:114K aosemi
ao8803.pdf 
AO8803Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8803/L uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and ID = -7 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
9.1. Size:349K aosemi
ao8801a.pdf
AO8801A20V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO8801A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -4.5Awith gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)
9.2. Size:108K aosemi
ao8806.pdf
AO8806Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8806 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 7 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
9.3. Size:302K aosemi
ao8801.pdf
AO8801Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8801 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and operation ID = -4.7 A (VGS = -4.5V)with gate voltages as low as 1.8V. This device is RDS(ON)
9.4. Size:139K aosemi
ao8804.pdf
AO8804Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8804 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 8A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON)
9.5. Size:152K aosemi
ao8807.pdf
AO8807Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8807 uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and ID = -6.5 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
9.6. Size:365K aosemi
ao8808a.pdf
AO8808ADual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8808A uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 7.9A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)
9.7. Size:1349K cn vbsemi
ao8801.pdf
AO8801www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2P-Channel
9.8. Size:1565K cn vbsemi
ao8808a.pdf
AO8808Awww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.013 at VGS = 4.5 V Available7.620RoHS*0.020 at VGS = 2.5 V 6.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATINGS TA = 25
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