AOB10N60L Todos los transistores

 

AOB10N60L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOB10N60L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 66 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO263

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AOB10N60L datasheet

 ..1. Size:259K  aosemi
 aob10n60l.pdf pdf_icon

AOB10N60L

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 6.1. Size:429K  aosemi
 aot10n60 aob10n60 aotf10n60.pdf pdf_icon

AOB10N60L

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 6.2. Size:375K  aosemi
 aob10n60.pdf pdf_icon

AOB10N60L

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 6.3. Size:253K  inchange semiconductor
 aob10n60.pdf pdf_icon

AOB10N60L

isc N-Channel MOSFET Transistor AOB10N60 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

MOSTRAR MÁS

Otros transistores... AO8816 , AO8842 , AOD400 , AOD402 , AOD404 , AOD406 , AOD408 , AOD410 , IRF2807 , AOB11S60L , AOB11S65L , AOB12N50L , AOB15S60L , AOB15S65L , AOB20S60L , AOB25S65L , AOB270L .

History: BR4953D | MDV5524URH | STD24N06LT4G | SM4309PSKP | STD1HN60K3 | PMF250XN | SM6128NSKP

 

 

 

 

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