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AOB12N50L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOB12N50L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 69 nS

Cossⓘ - Capacitancia de salida: 167 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm

Encapsulados: TO263

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AOB12N50L datasheet

 ..1. Size:257K  aosemi
aob12n50l.pdf pdf_icon

AOB12N50L

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 6.1. Size:435K  aosemi
aot12n50 aob12n50 aotf12n50.pdf pdf_icon

AOB12N50L

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 6.2. Size:434K  aosemi
aob12n50.pdf pdf_icon

AOB12N50L

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 6.3. Size:253K  inchange semiconductor
aob12n50.pdf pdf_icon

AOB12N50L

isc N-Channel MOSFET Transistor AOB12N50 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

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