AOB15S60L Todos los transistores

 ..1. Size:343K  aosemi
 aob15s60l.pdf

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing

 ..2. Size:557K  aosemi
 aot15s60l aob15s60l aotf15s60l aotf15s60.pdf

AOT15S60L/AOB15S60L/AOTF15S60L/AOTF15S60 TM 600V 15A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60L & AOB15S60L & AOTF15S60L & AOTF15S60 IDM 63A have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance RDS(ON),max 0.29W and robustness in switching applications. Qg,typ 16n

 ..3. Size:253K  inchange semiconductor
 aob15s60l.pdf

isc N-Channel MOSFET Transistor AOB15S60L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 6.1. Size:343K  aosemi
 aob15s60.pdf

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing

 6.2. Size:343K  aosemi
 aot15s60 aob15s60 aotf15s60.pdf

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing

 6.3. Size:253K  inchange semiconductor
 aob15s60.pdf

isc N-Channel MOSFET Transistor AOB15S60 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp