AOB15S60L MOSFET Datasheet: N-Ch, 600V, 15A. Full specification with pinout and replacement list

AOB15S60L Specs and Replacement

   Type Designator: AOB15S60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO263

AOB15S60L substitution

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AOB15S60L datasheet

..1. Size:343K aosemi
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AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing... See More ⇒

..2. Size:253K inchange semiconductor
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isc N-Channel MOSFET Transistor AOB15S60L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

6.1. Size:343K aosemi
aob15s60.pdf pdf_icon

6.2. Size:253K inchange semiconductor
aob15s60.pdf pdf_icon

isc N-Channel MOSFET Transistor AOB15S60 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒