AOB27S60L Todos los transistores

 

AOB27S60L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOB27S60L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 357 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO263
 

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AOB27S60L datasheet

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 aob27s60l.pdf pdf_icon

AOB27S60L

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin

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 aot27s60 aob27s60 aotf27s60.pdf pdf_icon

AOB27S60L

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin

 6.2. Size:295K  aosemi
 aob27s60.pdf pdf_icon

AOB27S60L

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin

 6.3. Size:258K  inchange semiconductor
 aob27s60.pdf pdf_icon

AOB27S60L

Isc N-Channel MOSFET Transistor AOB27S60 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

MOSTRAR MÁS

Otros transistores... AOB11S60L , AOB11S65L , AOB12N50L , AOB15S60L , AOB15S65L , AOB20S60L , AOB25S65L , AOB270L , STP65NF06 , AOB418 , AOB482 , AOB4S60L , AOB7S60L , AOB7S65L , AOD4100 , AOD4104 , AOD4106 .

History: SI3420A | PJD5NA80 | IXFT4N100Q | STF8234 | BUK7E5R2-100E | FMH17N60ES

 

 
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