All MOSFET. AOB27S60L Datasheet

 

AOB27S60L Datasheet and Replacement


   Type Designator: AOB27S60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO263
 

 AOB27S60L substitution

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AOB27S60L Datasheet (PDF)

 ..1. Size:295K  aosemi
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AOB27S60L

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 6.1. Size:376K  aosemi
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AOB27S60L

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 6.2. Size:295K  aosemi
aob27s60.pdf pdf_icon

AOB27S60L

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 6.3. Size:258K  inchange semiconductor
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AOB27S60L

Isc N-Channel MOSFET Transistor AOB27S60FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: AOB11S60L , AOB11S65L , AOB12N50L , AOB15S60L , AOB15S65L , AOB20S60L , AOB25S65L , AOB270L , IRFZ48N , AOB418 , AOB482 , AOB4S60L , AOB7S60L , AOB7S65L , AOD4100 , AOD4104 , AOD4106 .

History: VMO1600-02P | FMP10N60E | HGI090NE6AL | UTT6NP10G-S08-R | SIA537EDJ | IXFX170N20P | QM2N7002E3K1

Keywords - AOB27S60L MOSFET datasheet

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 AOB27S60L equivalent finder
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