AOB418 Todos los transistores

 ..1. Size:296K  aosemi
 aob418.pdf

AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D

 0.1. Size:296K  aosemi
 aob418l.pdf

AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D

 0.2. Size:177K  aosemi
 aob4184.pdf

AOB4184 40V N-Channel MOSFET General Description Features The AOB4184 uses advanced trench technology and design to provide excellent RDS(ON) with low gate VDS (V) =40V charge. With the excellent thermal resistance of the ID = 50 A (VGS = 10V) D2PAK package, this device is well suited for high RDS(ON)

 0.3. Size:239K  inchange semiconductor
 aob418l.pdf

isc N-Channel MOSFET Transistor AOB418L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 0.4. Size:238K  inchange semiconductor
 aob4184.pdf

isc N-Channel MOSFET Transistor AOB4184 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 10.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene