AOB418 Datasheet and Replacement
Type Designator: AOB418
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 105 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 382 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO263
AOB418 substitution
AOB418 Datasheet (PDF)
aob418.pdf

AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D
aob418l.pdf

AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D
aob4184.pdf

AOB418440V N-Channel MOSFETGeneral Description FeaturesThe AOB4184 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate VDS (V) =40Vcharge. With the excellent thermal resistance of the ID = 50 A (VGS = 10V)D2PAK package, this device is well suited for high RDS(ON)
aob418l.pdf

isc N-Channel MOSFET Transistor AOB418LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
Datasheet: AOB11S65L , AOB12N50L , AOB15S60L , AOB15S65L , AOB20S60L , AOB25S65L , AOB270L , AOB27S60L , NCEP15T14 , AOB482 , AOB4S60L , AOB7S60L , AOB7S65L , AOD4100 , AOD4104 , AOD4106 , AOD4110 .
History: XP152A12C0MR-G
Keywords - AOB418 MOSFET datasheet
AOB418 cross reference
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History: XP152A12C0MR-G



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