AOB418 MOSFET Datasheet: N-Ch, 100V, 105A. Full specification with pinout and replacement list

AOB418 Specs and Replacement

   Type Designator: AOB418
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 105 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 382 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO263

AOB418 substitution

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AOB418 datasheet

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AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D ... See More ⇒

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AOB4184 40V N-Channel MOSFET General Description Features The AOB4184 uses advanced trench technology and design to provide excellent RDS(ON) with low gate VDS (V) =40V charge. With the excellent thermal resistance of the ID = 50 A (VGS = 10V) D2PAK package, this device is well suited for high RDS(ON) ... See More ⇒

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isc N-Channel MOSFET Transistor AOB418L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen... See More ⇒