AOB7S65L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOB7S65L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 30 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de AOB7S65L MOSFET
- Selecciónⓘ de transistores por parámetros
AOB7S65L datasheet
aob7s65l.pdf
AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low
aob7s65l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOB7S65L FEATURES High speed switching Low gate input resistance Standard level gate drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
aob7s65.pdf
AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low
aot7s65 aob7s65 aotf7s65.pdf
AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low
Otros transistores... AOB20S60L , AOB25S65L , AOB270L , AOB27S60L , AOB418 , AOB482 , AOB4S60L , AOB7S60L , IRF830 , AOD4100 , AOD4104 , AOD4106 , AOD4110 , AOD4112 , AOI1N60L , AOI472A , AOI518 .
History: MDV5524URH | STK630F | PMF250XN | 2N7002G-AE2-R | SM6128NSKP | STD24N06LT4G
History: MDV5524URH | STK630F | PMF250XN | 2N7002G-AE2-R | SM6128NSKP | STD24N06LT4G
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E | ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E
Popular searches
bc640 | 2sc756 | oc44 transistor datasheet | 2sa1210 | 2sc3792 | mps2907a transistor equivalent | 2sc1626 | b560 transistor
