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AOB7S65L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOB7S65L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO263

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AOB7S65L datasheet

 ..1. Size:302K  aosemi
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AOB7S65L

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low

 ..2. Size:202K  inchange semiconductor
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AOB7S65L

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOB7S65L FEATURES High speed switching Low gate input resistance Standard level gate drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 7.1. Size:302K  aosemi
aob7s65.pdf pdf_icon

AOB7S65L

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low

 7.2. Size:303K  aosemi
aot7s65 aob7s65 aotf7s65.pdf pdf_icon

AOB7S65L

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low

Otros transistores... AOB20S60L , AOB25S65L , AOB270L , AOB27S60L , AOB418 , AOB482 , AOB4S60L , AOB7S60L , IRF830 , AOD4100 , AOD4104 , AOD4106 , AOD4110 , AOD4112 , AOI1N60L , AOI472A , AOI518 .

History: MDV5524URH | STK630F | PMF250XN | 2N7002G-AE2-R | SM6128NSKP | STD24N06LT4G

 

 

 

 

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