AOB7S65L PDF and Equivalents Search

 

AOB7S65L Specs and Replacement

Type Designator: AOB7S65L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO263

AOB7S65L substitution

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AOB7S65L datasheet

 ..1. Size:302K  aosemi
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AOB7S65L

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low ... See More ⇒

 ..2. Size:202K  inchange semiconductor
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AOB7S65L

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOB7S65L FEATURES High speed switching Low gate input resistance Standard level gate drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒

 7.1. Size:302K  aosemi
aob7s65.pdf pdf_icon

AOB7S65L

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low ... See More ⇒

 7.2. Size:303K  aosemi
aot7s65 aob7s65 aotf7s65.pdf pdf_icon

AOB7S65L

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low ... See More ⇒

Detailed specifications: AOB20S60L, AOB25S65L, AOB270L, AOB27S60L, AOB418, AOB482, AOB4S60L, AOB7S60L, IRF830, AOD4100, AOD4104, AOD4106, AOD4110, AOD4112, AOI1N60L, AOI472A, AOI518

Keywords - AOB7S65L MOSFET specs

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