AOWF240 Todos los transistores

 ..1. Size:266K  aosemi
 aowf240.pdf

AOWF240 40V N-Channel MOSFET General Description Product Summary The AOWF240 uses Trench MOSFET technology that is VDS 40V uniquely optimized to provide the most efficient high ID (at VGS=10V) 83A frequency switching performance. Power losses are

 9.1. Size:279K  aosemi
 aow20s60 aowf20s60.pdf

AOW20S60/AOWF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW20S60 & AOWF20S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 80A designed to deliver high levels of performance and RDS(ON),max 0.199 robustness in switching applications. Qg,typ 20nC By providing low RDS(on), Qg a

 9.2. Size:424K  aosemi
 aowf296.pdf

AOW296/AOWF296 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)

 9.3. Size:265K  aosemi
 aow25s65 aowf25s65.pdf

AOW25S65/AOWF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW25S65 & AOWF25S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 104A designed to deliver high levels of performance and RDS(ON),max 0.19 robustness in switching applications. Qg,typ 26.4nC By providing low RDS(on), Qg

 9.4. Size:279K  aosemi
 aowf20s60.pdf

AOW20S60/AOWF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW20S60 & AOWF20S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 80A designed to deliver high levels of performance and RDS(ON),max 0.199 robustness in switching applications. Qg,typ 20nC By providing low RDS(on), Qg a

 9.5. Size:256K  aosemi
 aowf2606.pdf

AOWF2606 60V N-Channel MOSFET General Description Product Summary VDS The AOWF2606 uses Trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 51A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 9.6. Size:265K  aosemi
 aowf25s65.pdf

AOW25S65/AOWF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW25S65 & AOWF25S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 104A designed to deliver high levels of performance and RDS(ON),max 0.19 robustness in switching applications. Qg,typ 26.4nC By providing low RDS(on), Qg