AOWF240
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOWF240
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 33.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 83
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 1070
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026
Ohm
Package: TO262F
AOWF240
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOWF240
Datasheet (PDF)
..1. Size:266K aosemi
aowf240.pdf
AOWF24040V N-Channel MOSFETGeneral Description Product SummaryThe AOWF240 uses Trench MOSFET technology that isVDS40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 83Afrequency switching performance. Power losses are
9.1. Size:424K aosemi
aowf296.pdf
AOW296/AOWF296TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)
9.2. Size:279K aosemi
aowf20s60.pdf
AOW20S60/AOWF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW20S60 & AOWF20S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 80Adesigned to deliver high levels of performance and RDS(ON),max 0.199robustness in switching applications. Qg,typ 20nCBy providing low RDS(on), Qg a
9.3. Size:256K aosemi
aowf2606.pdf
AOWF260660V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOWF2606 uses Trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 51Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.4. Size:265K aosemi
aowf25s65.pdf
AOW25S65/AOWF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW25S65 & AOWF25S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 104Adesigned to deliver high levels of performance and RDS(ON),max 0.19robustness in switching applications. Qg,typ 26.4nCBy providing low RDS(on), Qg
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