AOWF7S60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOWF7S60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 28 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO262F
Búsqueda de reemplazo de AOWF7S60 MOSFET
AOWF7S60 Datasheet (PDF)
aowf7s60.pdf

AOW7S60/AOWF7S60TM600V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW7S60 & AOWF7S60 have been fabricated usingthe advanced MOSTM high voltage process that is IDM 33Adesigned to deliver high levels of performance and RDS(ON),max 0.6robustness in switching applications. Qg,typ 8.2nCBy providing low RDS(on), Qg and EOS
aowf7s65.pdf

AOW7S65/AOWF7S65TM650V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW7S65 & AOWF7S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 30Adesigned to deliver high levels of performance and RDS(ON),max 0.65robustness in switching applications. Qg,typ 9.2nCBy providing low RDS(on), Qg and EO
aowf780a70.pdf

AOWF780A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max
Otros transistores... AOL1420 , AOL1428 , AOL1436 , AOL1444 , AOL1446 , AOL1704 , AOU7S60 , AOWF240 , IRF1404 , AOD414 , AOD4184 , AOD4187 , AOD4191L , AOD420 , AOD448 , AOD454 , AOD456A .
History: CES2316 | IPD06N03LBG | IXTQ110N10P | AON6458 | WFF640 | SUP70N03-09BP | AON6572
History: CES2316 | IPD06N03LBG | IXTQ110N10P | AON6458 | WFF640 | SUP70N03-09BP | AON6572



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