AOD456A Todos los transistores

 ..1. Size:193K  aosemi
 aod456a.pdf

AOD456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD456 uses advanced trench technology and VDS (V) = 25V design to provide excellent RDS(ON) with low gate ID = 50A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 8.1. Size:193K  aosemi
 aod456.pdf

AOD456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD456 uses advanced trench technology and VDS (V) = 25V design to provide excellent RDS(ON) with low gate ID = 50A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 8.2. Size:1361K  cn vbsemi
 aod456.pdf

AOD456 www.VBsemi.tw N-Channel 20-V (D-S)175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 65 20 20 0.008 @ VGS = 2.5 V 45 D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Paramet

 8.3. Size:265K  inchange semiconductor
 aod456.pdf

isc N-Channel MOSFET Transistor AOD456 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V = 25V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a