AOTF15S65L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOTF15S65L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 58 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO220F

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AOTF15S65L Datasheet (PDF)

..1. Size:302K aosemi
aotf15s65l.pdf

AOT15S65/AOB15S65/AOTF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT15S65 & AOB15S65 & AOTF15S65 have beenfabricated using the advanced MOSTM high voltage IDM 60Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 17.2nCBy provid

..2. Size:250K inchange semiconductor
aotf15s65l.pdf

isc N-Channel MOSFET Transistor AOTF15S65LFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

5.1. Size:302K aosemi
aotf15s65.pdf

5.2. Size:250K inchange semiconductor
aotf15s65.pdf

isc N-Channel MOSFET Transistor AOTF15S65FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

6.1. Size:343K aosemi
aotf15s60.pdf

AOT15S60/AOB15S60/AOTF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT15S60& AOB15S60 & AOTF15S60 have beenfabricated using the advanced MOSTM high voltage IDM 63Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 16nCBy providing

6.2. Size:343K aosemi
aotf15s60l.pdf

6.3. Size:251K inchange semiconductor
aotf15s60.pdf

isc N-Channel MOSFET Transistor AOTF15S60FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

6.4. Size:251K inchange semiconductor
aotf15s60l.pdf

isc N-Channel MOSFET Transistor AOTF15S60LFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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