AOTF15S65L - описание и поиск аналогов

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced MOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 17.2nC By provid

AOT15S65L/AOB15S65L/AOTF15S65L/AOTF15S65 TM 650V 15A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT15S65L & AOB15S65L & AOTF15S65L & AOTF15S65 have been fabricated using the advanced IDM 60A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.29W levels of performance and robustness in switching Qg,typ 17.2nC applicati

isc N-Channel MOSFET Transistor AOTF15S65L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced MOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 17.2nC By provid

isc N-Channel MOSFET Transistor AOTF15S65 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing

AOT15S60L/AOB15S60L/AOTF15S60L/AOTF15S60 TM 600V 15A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60L & AOB15S60L & AOTF15S60L & AOTF15S60 IDM 63A have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance RDS(ON),max 0.29W and robustness in switching applications. Qg,typ 16n

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing

isc N-Channel MOSFET Transistor AOTF15S60 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

isc N-Channel MOSFET Transistor AOTF15S60L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu