AOT402 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOT402 datasheet

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AOT402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT402 uses advanced trench technology and VDS (V) = 105V design to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

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AOT404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT404 uses advanced trench technology and VDS (V) = 105V design to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V) charge. This device is suitable for use in high voltage RDS(ON)

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AOT400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT400 uses advanced trench technology and VDS (V) = 75V design to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

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isc N-Channel MOSFET Transistor AOT404 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 105V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

Otros transistores... AOTF15S60L , AOTF15S65L , AOTF18N65L , AOTF20S60L , AOTF298L , AOTF7S60 , AOTF7S60L , AOT400 , IRFP260 , AOT426 , AOT428 , AOT42S60L , AOT462 , AOT4S60L , AOT7S60L , AOT7S65L , AOT9N40L .