AOT402 Datasheet and Replacement
Type Designator: AOT402
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 105 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 42.5 nS
Cossⓘ - Output Capacitance: 820 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
Package: TO220
AOT402 substitution
AOT402 Datasheet (PDF)
aot402.pdf

AOT402N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT402 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)
aot404.pdf

AOT404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT404 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V)charge. This device is suitable for use in high voltage RDS(ON)
aot400.pdf

AOT400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT400 uses advanced trench technology and VDS (V) = 75Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)
aot404.pdf

isc N-Channel MOSFET Transistor AOT404FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 105V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: AOTF15S60L , AOTF15S65L , AOTF18N65L , AOTF20S60L , AOTF298L , AOTF7S60 , AOTF7S60L , AOT400 , 8205A , AOT426 , AOT428 , AOT42S60L , AOT462 , AOT4S60L , AOT7S60L , AOT7S65L , AOT9N40L .
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