AOT426 Todos los transistores

 ..1. Size:68K  aosemi
 aot426.pdf

AOT426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT426 uses advanced trench technology and VDS (V) = 30V design to provide excellent RDS(ON) with low gate ID = 85A charge. This device is suitable for use in PWM, load RDS(ON)

 9.1. Size:443K  aosemi
 aot424.pdf

AOT424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT424 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and low ID = 110A (VGS = 10V) gate resistance. This device is ideally suited for use as RDS(ON)

 9.2. Size:302K  aosemi
 aot42s60.pdf

AOT42S60/AOB42S60 TM 600V 37A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60 & AOB42S60 have been fabricated using IDM 166A the advanced MOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.109 robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS alo

 9.3. Size:335K  aosemi
 aot42s60l.pdf

AOT42S60/AOTF42S60 TM 600V 39A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60 & AOTF42S60 have been fabricated IDM 166A using the advanced MOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.099 robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Q

 9.4. Size:524K  aosemi
 aot42s60l aob42s60l.pdf

AOT42S60L/AOB42S60L TM 600V 37A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60L & AOB42S60L have been fabricated IDM 166A using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.109W robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS alo

 9.5. Size:77K  aosemi
 aot428.pdf

AOT428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT428 uses advanced trench technology and VDS (V) = 75V design to provide excellent RDS(ON) with low gate ID = 80A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 9.6. Size:818K  cn vbsemi
 aot424.pdf

AOT424 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 98 30 82 nC 0.0045 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220AB D Server DC/DC G S G D S N-Channel MOSFET Top View ABSOL

 9.7. Size:260K  inchange semiconductor
 aot424.pdf

isc N-Channel MOSFET Transistor AOT424 FEATURES Drain Current I = 110A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 9.8. Size:245K  inchange semiconductor
 aot42s60.pdf

isc N-Channel MOSFET Transistor AOT42S60 FEATURES Drain Current I = 37A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 109m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen