Справочник MOSFET. AOT426

 

AOT426 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOT426

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 75 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 85 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 11 ns

Выходная емкость (Cd): 462 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.006 Ohm

Тип корпуса: TO220

Аналог (замена) для AOT426

 

 

AOT426 Datasheet (PDF)

1.1. aot426.pdf Size:68K _aosemi

AOT426
AOT426

AOT426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT426 uses advanced trench technology and VDS (V) = 30V design to provide excellent RDS(ON) with low gate ID = 85A charge. This device is suitable for use in PWM, load RDS(ON) < 6mΩ (VGS = 10V) switching and general purpose applications. RDS(ON) < 11mΩ (VGS = 4.5V) Standard Product AOT42

5.1. aot42s60.pdf Size:302K _aosemi

AOT426
AOT426

AOT42S60/AOB42S60 TM 600V 37A α MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60 & AOB42S60 have been fabricated using IDM 166A the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.109Ω robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS alo

5.2. aot428.pdf Size:77K _aosemi

AOT426
AOT426

AOT428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT428 uses advanced trench technology and VDS (V) = 75V design to provide excellent RDS(ON) with low gate ID = 80A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) < 11 mΩ (VGS = 10V) switching and general purpose applications. Standard Product AOT428 is Pb-free (meet

 5.3. aot42s60l.pdf Size:335K _aosemi

AOT426
AOT426

AOT42S60/AOTF42S60 TM 600V 39A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT42S60 & AOTF42S60 have been fabricated IDM 166A using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.099Ω robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Q

5.4. aot424.pdf Size:443K _aosemi

AOT426
AOT426

AOT424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT424 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and low ID = 110A (VGS = 10V) gate resistance. This device is ideally suited for use as RDS(ON) < 4mΩ (VGS = 10V) a low side switch in CPU core power conversion. RDS(ON) < 5.5mΩ (VGS = 4.5V) St

Другие MOSFET... AOTF15S65L , AOTF18N65L , AOTF20S60L , AOTF298L , AOTF7S60 , AOTF7S60L , AOT400 , AOT402 , IRFP4332 , AOT428 , AOT42S60L , AOT462 , AOT4S60L , AOT7S60L , AOT7S65L , AOT9N40L , AON2880 .

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Список транзисторов

Обновления

MOSFET: MDZ1N60UMH | MDV5524URH | MDV3605URH | MDV3604URH | MDV1595SURH | MDV1548URH | MDV1545URH | MDV1542URH | MDV1529EURH | MDV1528URH | MDV1527URH | MDV1526URH | MDV1525URH | MDV1524URH | MDV1523URH |
 


 

 

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