AOT9N40L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOT9N40L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 132 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 52 nS
   Cossⓘ - Capacitancia de salida: 73 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET AOT9N40L

AOT9N40L Datasheet (PDF)

..1. Size:252K aosemi
aot9n40l.pdf

AOT9N40400V,8A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT9N40 is fabricated using an advanced high 500V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V)8Alevels of performance and robustness in popular AC-DC

7.1. Size:252K aosemi
aot9n40.pdf

7.2. Size:261K inchange semiconductor
aot9n40.pdf

isc N-Channel MOSFET Transistor AOT9N40FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.1. Size:403K 1
aot9n70 aotf9n70 aob9n70.pdf

AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

9.2. Size:528K aosemi
aot9n70.pdf

AOT9N70/AOTF9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

9.3. Size:159K aosemi
aot9n50.pdf

AOT9N50/AOTF9N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT9N50 & AOTF9N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

9.4. Size:261K inchange semiconductor
aot9n70.pdf

isc N-Channel MOSFET Transistor AOT9N70FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

9.5. Size:261K inchange semiconductor
aot9n50.pdf

isc N-Channel MOSFET Transistor AOT9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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