Справочник MOSFET. AOT9N40L

 

AOT9N40L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOT9N40L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 132 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13.1 nC
   trⓘ - Время нарастания: 52 ns
   Cossⓘ - Выходная емкость: 73 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO220

 Аналог (замена) для AOT9N40L

 

 

AOT9N40L Datasheet (PDF)

 ..1. Size:252K  aosemi
 aot9n40l.pdf

AOT9N40L AOT9N40L

AOT9N40400V,8A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT9N40 is fabricated using an advanced high 500V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V)8Alevels of performance and robustness in popular AC-DC

 7.1. Size:252K  aosemi
 aot9n40.pdf

AOT9N40L AOT9N40L

AOT9N40400V,8A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT9N40 is fabricated using an advanced high 500V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V)8Alevels of performance and robustness in popular AC-DC

 7.2. Size:261K  inchange semiconductor
 aot9n40.pdf

AOT9N40L AOT9N40L

isc N-Channel MOSFET Transistor AOT9N40FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:403K  1
 aot9n70 aotf9n70 aob9n70.pdf

AOT9N40L AOT9N40L

AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.2. Size:528K  aosemi
 aot9n70.pdf

AOT9N40L AOT9N40L

AOT9N70/AOTF9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.3. Size:159K  aosemi
 aot9n50.pdf

AOT9N40L AOT9N40L

AOT9N50/AOTF9N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT9N50 & AOTF9N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.4. Size:261K  inchange semiconductor
 aot9n70.pdf

AOT9N40L AOT9N40L

isc N-Channel MOSFET Transistor AOT9N70FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 9.5. Size:261K  inchange semiconductor
 aot9n50.pdf

AOT9N40L AOT9N40L

isc N-Channel MOSFET Transistor AOT9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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