AON3406 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON3406
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: DFN3X3

Búsqueda de reemplazo de MOSFET AON3406

AON3406 Datasheet (PDF)

..1. Size:418K aosemi
aon3406.pdf

AON340630V N-Channel MOSFETGeneral Description FeaturesThe AON3406 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 10A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

8.1. Size:109K aosemi
aon3408.pdf

AON340830V N-Channel MOSFETGeneral Description Product SummaryFeaturesThe AON3408 uses advanced trench technology to VVDS (V) 30V (V) ==30VDSprovide excellent RDS(ON) and low gate charge. ThisIDD 9.2A (VGS 10V)I ==11A (VGS ==10V)device is suitable for use as a load switch or in PWMRDS(ON)

8.2. Size:106K aosemi
aon3402.pdf

AON340220V N-Channel MOSFETGeneral Description Product SummaryThe AON3402 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge andID = 12.6A (VGS = 4.5V)operation with gate voltages as low as 1.8V whileRDS(ON)

9.1. Size:310K 1
aon3414.pdf

AON341430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)

9.2. Size:227K aosemi
aon3419.pdf

AON341930V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON3419 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -10Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

9.3. Size:310K aosemi
aon3414.pdf

AON341430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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