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AON3406 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON3406

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 6 nS

Conductancia de drenaje-sustrato (Cd): 145 pF

Resistencia drenaje-fuente RDS(on): 0.015 Ohm

Empaquetado / Estuche: DFN3X3

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AON3406 Datasheet (PDF)

1.1. aon3406.pdf Size:418K _aosemi

AON3406
AON3406

AON3406 30V N-Channel MOSFET General Description Features The AON3406 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) < 15mΩ (VGS = 10V) applications. The source leads are separated to allow RDS(ON) < 24mΩ (VGS = 4.5V) a Kelvin connection to the s

4.1. aon3408.pdf Size:109K _aosemi

AON3406
AON3406

AON3408 30V N-Channel MOSFET General Description Product Summary Features The AON3408 uses advanced trench technology to VVDS (V) 30V (V) ==30V DS provide excellent RDS(ON) and low gate charge. This IDD 9.2A (VGS 10V) I ==11A (VGS ==10V) device is suitable for use as a load switch or in PWM RDS(ON) < 14.5mΩ (V = 10V) RDS(ON) <24mΩ (VGS GS = 10V) applications. The source leads

4.2. aon3402.pdf Size:106K _aosemi

AON3406
AON3406

AON3402 20V N-Channel MOSFET General Description Product Summary The AON3402 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 12.6A (VGS = 4.5V) operation with gate voltages as low as 1.8V while RDS(ON) < 13mΩ (VGS = 4.5V) retaining a 12V VGS(MAX) rating.This device is suitable RDS(ON) < 17mΩ (VGS = 2.5V) for use as load switch a

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