AON3406 Todos los transistores

 ..1. Size:418K  aosemi
 aon3406.pdf

AON3406 30V N-Channel MOSFET General Description Features The AON3406 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

 8.1. Size:109K  aosemi
 aon3408.pdf

AON3408 30V N-Channel MOSFET General Description Product Summary Features The AON3408 uses advanced trench technology to VVDS (V) 30V (V) ==30V DS provide excellent RDS(ON) and low gate charge. This IDD 9.2A (VGS 10V) I ==11A (VGS ==10V) device is suitable for use as a load switch or in PWM RDS(ON)

 8.2. Size:106K  aosemi
 aon3402.pdf

AON3402 20V N-Channel MOSFET General Description Product Summary The AON3402 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 12.6A (VGS = 4.5V) operation with gate voltages as low as 1.8V while RDS(ON)

 9.1. Size:310K  1
 aon3414.pdf

AON3414 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)

 9.2. Size:227K  aosemi
 aon3419.pdf

AON3419 30V P-Channel MOSFET General Description Product Summary VDS The AON3419 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -10A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 9.3. Size:310K  aosemi
 aon3414.pdf

AON3414 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V)