AON3406 MOSFET Datasheet: N-Ch, 30V, 10A. Full specification with pinout and replacement list

AON3406 Specs and Replacement

Type Designator: AON3406

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: DFN3X3

AON3406 substitution

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AON3406 datasheet

..1. Size:418K aosemi
aon3406.pdf pdf_icon

AON3406 30V N-Channel MOSFET General Description Features The AON3406 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒

8.1. Size:109K aosemi
aon3408.pdf pdf_icon

AON3408 30V N-Channel MOSFET General Description Product Summary Features The AON3408 uses advanced trench technology to VVDS (V) 30V (V) ==30V DS provide excellent RDS(ON) and low gate charge. This IDD 9.2A (VGS 10V) I ==11A (VGS ==10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒

8.2. Size:106K aosemi
aon3402.pdf pdf_icon

AON3402 20V N-Channel MOSFET General Description Product Summary The AON3402 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 12.6A (VGS = 4.5V) operation with gate voltages as low as 1.8V while RDS(ON) ... See More ⇒

9.1. Size:310K 1
aon3414.pdf pdf_icon

AON3414 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 10.5A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒